Process for the production of functional crystalline film
AssigneeCanon Kabushiki Kaisha
InventorsMasahiro Kanai, Shunri Oda, Isamu Shimizu
Life of this patent
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Abstract
There is provided an improved process of forming a functional epitaxial film by using two kinds of active species and chemically reacting them. One of the species is an activated substance which contains silicon atoms or germanium atoms and halogen atoms. The other species is one which is generated from a chemical substance capable of contributing to formation of a film and chemically reactive with the former active species.
Claims55
A process for forming a functional epitaxial film on a substrate having a surface formed of a single crystal material of specific crystal orientation in a film deposition chamber, comprising the steps of:
- (i) generating an active species (A) by supplying an excitation energy to a raw material gas containing halogen and silicon or germanium in a chamber (A) for the generation of said active species (A);
- (ii) generating an active species (B) by supplying an excitation energy to H.sub.2 gas in a chamber (B) for the generation of said active species (B);
- and
- (iii) separately introducing said active species (A) and said active species (B) into said film deposition chamber at a flow ratio of 20:1 to 1:20 to mix and chemically react in a space open to said surface of said substrate being maintained at a temperature of 250.degree. to 800.degree. C. and under reduced pressure and to thereby form a functional epitaxial film on said surface of said substrate, said epitaxial film having the same crystal orientation as said substrate.
A process for forming a functional epitaxial film on a substrate having a surface formed of a single crystal material of specific crystal orientation in a film deposition chamber, comprising the steps of:
- (i) generating an active species (A) by supplying an excitation energy to a mixture of a raw material gas containing halogen and silicon or germanium and an impurity imparting raw material gas in an active species generation chamber (A);
- (ii) generating an active species (B) by supplying an excitation energy to H.sub.2 gas in an active species generation chamber (B);
- and
- (iii) separately introducing said active species (A) and said active species (B) into said film deposition chamber at a flow ratio if 20:1 to 1:20 to mix and chemically react in a space open to said surface of said substrate being maintained at a temperature of 250.degree. to 800.degree. C. and under reduced pressure and to thereby form a functional epitaxial film on said surface of said substrate, said epitaxial film having the same crystal orientation as said substrate.
A process for forming a functional epitaxial film on a substrate having a surface formed of a single crystal material of specific crystal orientation in a film deposition chamber, comprising the steps of:
- (i) generating an active species (A) by supplying an excitation energy to a raw material gas containing halogen and silicon or germanium in a chamber (A) for the generation of said active species (A);
- (ii) generating an active species (B) by supplying an excitation energy to a mixture of H.sub.2 gas and an impurity imparting raw material gas in a chamber (B) for the generation of said active species (B);
- and
- (iii) separately introducing said active species (A) and said active species (B) into said film deposition chamber at a flow ratio of 20:1 to 1:20 to mix and chemically react in a space open to said surface of said substrate being maintained at a temperature of 250.degree. to 800.degree. C. and under reduced pressure and to thereby form a functional epitaxial film on said surface of said substrate, said epitaxial film having the same crystal orientation as said substrate.
A process for forming a functional epitaxial film on a substrate having a surface formed of a single crystal material of specific crystal orientation in a film deposition chamber, comprising the steps of:
- (i) generating an active species (A) by supplying an excitation energy to a raw material gas containing halogen and silicon or germanium in a chamber (A) for the generation of said active species (A);
- (ii) generating an active species (B) by supplying an excitation energy to H.sub.2 gas in a chamber (B) for the generation of said active species (B);
- and
- (iii) separately introducing said active species (A) and said active species (B) into said film deposition chamber at a flow ratio of 20:1 to 1:20 to mix and chemically react in a space open to said surface of said substrate being maintained at a temperature of 250.degree. to 800.degree. C. and under reduced pressure while an excitation energy selected from light energy and heat energy is introduced into said film deposition chamber to thereby promote formation of a functional epitaxial film on said surface of said substrate, said epitaxial film having the same crystal orientation as said substrate.
A process for forming a functional epitaxial film on a substrate having a surface formed of a single crystal material of specific crystal orientation in a film deposition chamber, comprising the steps of:
- (i) generating an active species (A) by supplying an excitation energy to a mixture of raw material gas containing halogen and silicon or germanium and an impurity imparting raw material gas in an active species generation chamber (A);
- (ii) generating an active species (B) by supplying an excitation energy to H.sub.2 gas in an active species generation chamber (B);
- and
- (iii) separately introducing said active species (A) and said active species (B) into said film deposition chamber at a flow rate of 20:1 to 1:20 to mix and chemically react in a space open to said surface of said substrate being maintained at a temperature of 250.degree. to 800.degree. C. and under reduced pressure while an excitation energy selected from light energy and heat energy is introduced into said film deposition chamber to thereby promote formation of a functional epitaxial film on said surface of said substrate, said epitaxial film having the same crystal orientation as said substrate.
A process for forming a functional epitaxial film on a substrate having a surface formed of a single crystal material of specific crystal orientation in a film deposition chamber, comprising the steps of:
- (i) generating an active species (A) by supplying an excitation energy to a raw material gas containing halogen and silicon or germanium in a chamber (A) for the generation of said active species (A);
- (ii) generating an active species (B) by supplying an excitation energy to a mixture of H.sub.2 gas and an impurity imparting raw material gas in a chamber (B) for the generation of said active species (B);
- and
- (iii) separately introducing said active species (A) and said active species (B) into said film deposition chamber at a flow ratio of 20:1 to 1:20 to mix and chemically react in a space open to said surface of said substrate being maintained at a temperature of 250.degree. to 800.degree. C. and under reduced pressure while an excitation energy selected from light energy and heat energy is introduced into said film deposition chamber to thereby form a functional epitaxial film on said surface of said substrate, said epitaxial film having the same crystal orientation as said substrate.
A process for forming a functional epitaxial film on a substrate having a surface formed of a single crystal material of specific crystal orientation in a film deposition chamber, comprising the steps of:
- (i) generating an active species (A) by supplying an excitation energy to a raw material gas containing halogen and silicon or germanium in a chamber (A) for the generation of said species (A);
- (ii) generating an active species (B) by supplying an excitation energy to H.sub.2 gas in a chamber (B) for the generation of said active species (B);
- (iii) separately introducing said active species (A) and said active species (B) into said film deposition chamber at a flow rate of 20:1 to 1:20 to mix and chemically react in a space open to said surface of said substrate being maintained at a temperature of 250.degree. to 800.degree. C. and under reduced pressure to thereby form a functional epitaxial film on said surface of said substrate;
- and
- (iv) subjecting the film being deposited on said substrate to heat treatment by introducing an excitation energy into said film deposition chamber to promote the formation of said epitaxial film, said epitaxial film having the same crystal orientation as said substrate.
A process for forming a functional epitaxial film on a substrate having a surface formed of a single crystal material of specific crystal orientation in a film deposition chamber, comprising the steps of:
- (i) generating an active species (A) by supplying an excitation energy to a mixture of a raw material gas containing halogen and silicon or germanium and an impurity imparting raw material gas in an active species generation chamber (A);
- (ii) generating an active species (B) by supplying an excitation energy to H.sub.2 gas in an active species generation chamber (B);
- (iii) separately introducing said active species (A) and said active species (B) into said film deposition chamber at a flow ratio of 20:1 to 1:20 to mix and chemically react in a space open to said surface of said substrate being maintained at a temperature of 250.degree. to 800.degree. C. and under reduced pressure to thereby form a functional epitaxial film on said surface of said substrate;
- and
- (iv) subjecting the film being deposited on said substrate to heat treatment by introducing an excitation energy into said film deposition chamber to promote the formation of said epitaxial film, said epitaxial film having the same crystal orientation as said substrate.
A process for forming a functional epitaxial film on a substrate having a surface of a single crystal material of specific crystal orientation in a film deposition chamber, comprising the steps of:
- (i) generating an active species (A) by supplying an excitation energy to a raw material gas containing halogen and silicon or germanium in a chamber (A) for the generation of said active species (A);
- (ii) generating an active species (B) by supplying an excitation energy to a mixture of H.sub.2 gas and an impurity imparting raw material gas in a chamber (B) for the generation of said active species (B);
- (iii) separately introducing said active species (A) and said active species (B) into said film deposition chamber at a flow ratio of 20:1 to 1:20 to mix and chemically react in a space open to said surface of said substrate being maintained at a temperature of 250.degree. to 800.degree. C. and under reduced pressure to thereby form a functional epitaxial film on said surface of said substrate;
- and
- (iv) subjecting the film being deposited on said substrate to heat treatment by introducing an excitation energy into said film deposition chamber to promote the formation of said epitaxial film, said epitaxial film having the same crystal orientation as said substrate.
Dependencies are inferred from the claim text.