Memory cell circuits, devices, systems and methods of operation
AssigneeTexas Instruments Incorporated
InventorsJames F. Hollander, William R. Krenik, Louis J. Izzi
Life of this patent
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AssigneeTexas Instruments Incorporated
InventorsJames F. Hollander, William R. Krenik, Louis J. Izzi
Estimating the term…
A memory cell constructed in accordance with the present invention includes a node operable to present an electrical level representing a first state or a second state. Further included is a first switching device having a first terminal connected to the node such that if the first switching device were to close, the electrical level at the node would be connected to a second terminal of the first switching device. Additionally, second and third switching devices are provided both having first and second terminals and both operable to switch as a function of the state at the node. Finally, a single control switching device is provided in association with the second and third switching devices wherein a control signal switches the control switching device such that the state at the node may be determined by connecting to the first terminals of the second and third switching devices.
A memory cell, comprising:
A memory cell, comprising:
A memory cell, comprising:
A memory cell, comprising:
A method of determining the state at a node, comprising the steps of:
A system, comprising:
A system comprising:
A system, comprising:
Dependencies are inferred from the claim text.