Integrated circuit element, methods of fabrication and utilization

An integrated circuit element, comprising:

• a) a semiconductor substrate;
• b) an acoustic charge transport device integral with said substrate and comprising a longitudinally extending buried channel bounded by a barrier element disposed at a surface of said substrate and an input means at one end of said channel and an output means at an opposite end of said channel and an acoustic wave generator for propogating a wave through said channel for transporting charge between said input and output means;
• c) a field effect transistor integral with said substrate and comprising source, gate and drain means;
• and,
• d) means operably interconnecting one of said input means, barrier element and output means with one of said source, gate and drain means.

The method of regulating a signal, comprising the steps of:

• a) providing an acoustic charge transport device comprising a buried channel overlayed with a barrier element and with an input means at one end thereof and an output means at the other end thereof;
• b) providing a field effect transistor comprising source, gate and drain means;
• c) interconnecting one of the input means, barrier element and output means with one of the source, gate and drain means;
• and,
• d) inputting a first signal to one of the acoustic charge transport device and the field effect transistor and thereby operatively effecting the interconnected one of the input means, barrier element, output means, source means, gate means and drain means of the other one of the acoustic charge transport device and the field effect transistor so that a second signal propagating through the other one of the acoustic charge transport device and the field-effect transistor is regulated or generated.

The method of fabricating a circuit element, comprising the steps of:

• a) providing a semiconductor substrate;
• b) defining by doping a channel stop within a first portion of the substrate;
• c) defining by doping source, channel and drain regions within the channel stop, the source, channel and drain regions being doped with ions having a polarity opposite to the polarity of the ions doping the channel stop and the source and drain regions having substantially identical doping concentration differing from the doping concentration of the channel region;
• d) forming a first contact on the channel stop, a second contact on the source region, a gate contact on the channel region and a drain contact on the drain region;
• e) defining a buried transport channel within a second portion of the substrate;
• f) forming transducer means, input and output contact and a barrier element on the substrate in operative position to the channel;
• and,
• g) interconnecting one of the transducer means, input and output contacts and barrier element with one of the first, second, gate and drain contacts.

A circuit element, comprising:

• a) an acoustic charge transport device comprising input means, barrier means and output means;
• b) a transistor assembly comprising source means, gate means and drain means;
• c) means operably interconnecting one of said input, output and barrier means with one of said source, drain and gate means;
• d) said acoustic charge transport device and said transistor assembly being integrated onto a common semiconductor substrate;
• and,
• e) selected portions of said substrate having been exposed to bombardment by high energy ions for isolating said acoustic charge transport device from said transistor assembly.

A circuit element, comprising:

• a) an acoustic charge transport device comprising input means, barrier means and output means;
• b) a transistor assembly comprising source means, gate means and drain means;
• c) means operably interconnecting one of said input, output and barrier means with one of said source, drain and gate means;
• d) said acoustic charge transport device and said transistor assembly being integrated onto a common semiconductor substrate;
• e) each of said input, output, barrier, source, drain and gate means includes a metallic layer formed on a surface of said substrate;
• and,
• f) said source means includes a first and second sequentially spaced contacts, said first contact being in intimate contact with a first portion of said substrate which has been treated to have a first polarity and said second contact is in intimate contact with another portion of said substrate which has been treated to have a second polarity.