GaAs driver circuit
AssigneeRockwell International Corporation
InventorsJohn J. Ennis, Gary L. Heimbigner
Life of this patent
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Abstract
The invention comprises a gallium arsenide driver with float capability for logic high and logic low signals including logic means for receiving an input signal and providing logic high and low signals therefrom. Level shift means responsive to the high and low signals downshift the voltage levels thereof. Common gate means responsive to the downshifted signal voltage levels amplify these signals, and output source-follower means responsive to the amplified signals provide output signals to a pad.
Claims4
A gallium arsenide driver for level shifting and amplifying logic high and low signals and having float capability, comprising in combination:
- a level shift circuit comprising a first MESFET having a gate lead for receiving said signals, a drain lead for connection to a first source of potential and a source lead;
- a common gate amplifier comprising a second MESFET having a gate lead, drain lead and a source lead;
- at least one level shifting diode connected between the source lead of the first MESFET and the source lead of the second MESFET;
- a pull down device connected between the source lead of the second MESFET and a second source of potential;
- a further source of potential;
- a pull up device connected between said drain lead of the second MESFET and said further source;
- an output MESFET having a source output transmission line load connected to ground;
- a bidirectional pad interposed between the transmission line load and the output MESFET source;
- the output MESFET having its drain connected to said further source;
- a gate connection for said output MESFET from the drain lead of said second MESFET;
- and,
- means applying a fixed reference potential to the gate lead of said second MESFET to establish conduction therein only when a low logic signal is applied to its source, whereby when the signal is low at the gate of the first MESFET, the output MESFET is cut off because said low signal is down shifted by the level shifting diode such that the second MESFET is turned on to decrease the gate signal at the output MESFET.
Dependencies are inferred from the claim text.