Ohmic contact to p-type ZnSe
AssigneeNorth American Philips Corporation
InventorsNikhil R. Taskar, Babar A. Khan, Donald R. Dorman
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Abstract
A semiconductor structure with a p-type ZnSe layer has an improved ohmic contact consisting of a layer of Hg.sub.x Zn.sub.1-x Te.sub.a Se.sub.b Sc where x=0-1 with x being 0 at the surface of the ZnSe layer and increasing thereafter, a, b and c each =0-1 and a+b+c=1.
Claims11
A semiconductor structure comprising a p-type ZnSe layer doped with nitrogen and provided with an improved ohmic contact, said ohmic contact consisting of a layer of Hg.sub.x Zn.sub.1-x Te.sub.a Se.sub.b S.sub.c, wherein x has a value of 0-1, the value of x being 0 at the surface of said ZnSe layer and increasing thereafter and a, b and c, each have a value of 0-1 and a+b+c=1.
A semiconductor structure comprising a nitrogen doped, p-type ZnSe or ZnSSe layer provided with an improved ohmic contact, said ohmic contact consisting of a layer of Hg.sub.X Zn.sub.1-x Se.sub.b S.sub.c wherein x has a value of 0-1, b and c each have a value of 0-1, b+c=1 and the value of x is 0 at the surface of the ZnSSe or Zn Se layer and increasing to 1 at the surface of the Hg.sub.x Zn.sub.1-x S.sub.b Se.sub.c layer
Dependencies are inferred from the claim text.