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US 5,293,073 AGranted
Electrode structure of a semiconductor device which uses a copper wire as a bonding wire
AssigneeKabushiki Kaisha Toshiba
InventorTadaaki Ono
Life of this patent
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Abstract
A semiconductor device comprises a semiconductor substrate, a first insulation film formed on the semiconductor substrate, a metal film for forming a bonding pad on the first insulation film, and a second insulation film which is formed between the first insulation film and the bonding pad and which is stiffer than the first insulation film.
Claims4
A semiconductor device comprising:
- a semiconductor substrate,
- a first insulation film formed to said semiconductor substrate;
- a metal film having a bonding pad portion formed above said first insulation film;
- a second insulation film, containing carbon, formed between said first insulation film and said bonding pad portion and being in contact with said first insulation film and said bonding pad portion, said second insulation film being formed only directly under said bonding pad portion, said second insulation film being stiffer than said first insulation film for preventing stress from locally concentrating under said bonding pad portion, and said second insulation film having a thickness between 500 and 3,000.ANG.;
- and
- a bonding wire made of one of copper and an alloy containing copper connected to said bonding pad portion.
3 more elements
A semiconductor device comprising:
- a semiconductor substrate o which a semiconductor element is formed;
- a first insulation film having a contact hole in a predetermined region thereof;
- a metal film having a bonding pad portion formed above said first insulation film, said metal film being connected to said semiconductor element through said contact hole;
- a second insulation film, containing carbon, formed between said first insulation film and said bonding pad portion and being in contact with said first insulation film and said bonding pad portion, said second insulation film being formed only directly under said bonding pad portion, and said second insulation film being stiffer than said first insulation film to prevent stress from locally concentrating under said bonding pad portion;
- and
- a bonding wire made of one of copper and an alloy containing copper and connected to said bonding pad portion.
3 more elements
Dependencies are inferred from the claim text.