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US 5,293,050 AGranted
Semiconductor quantum dot light emitting/detecting devices
AssigneeInternational Business Machines Corporation
InventorsJonathan D. Chapple-Sokol, Seshadri Subbanna, Manu J. Tejwani
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Abstract
A semiconductor light emitting/detecting device has a first doped silicon layer, an intrinsic silicon epitaxial layer formed on the first doped silicon layer, at least one quantum dot embedded within the intrinsic silicon epitaxial layer, and a second doped silicon layer formed on the second intrinsic silicon epitaxial layer.
Claims5
A semiconductor light emitting and light detecting device, comprising:
- a first doped silicon layer of a first conductivity type;
- an intrinsic silicon epitaxial layer formed on said doped silicon layer;
- at least one quantum dot embedded within said intrinsic silicon epitaxial layer;
- and
- a second doped silicon layer of a second conductivity type formed on said intrinsic silicon epitaxial layer.
2 more elements
Dependencies are inferred from the claim text.