Process for preparing superconducting junction of oxide superconductor
AssigneeSumitomo Electric Industries, Ltd.
InventorsSaburo Tanaka, Hidenori Nakanishi, Hideo Itozaki, Takashi Matsuura
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Abstract
Improvement in a process for fabricating a superconducting junction by depositing successively a first oxide superconductor thin layer, a non-superconducting intermediate thin film layer and a second oxide superconductor thin film layer on a substrate in this order. In the invention, the non-superconducting intermediate thin film layer is composed of MgO and the substrate is preheated at 600.degree.-650.degree. C. for at least 5 minutes in the presence of O.sub.2, and is heated at a temperature between 200.degree. and 400.degree. C. during the non-superconducting intermediate thin film layer is deposited.
Claims14
A process for fabricating a superconducting junction by depositing successively a first oxide superconductor thin film layer, a non-superconducting intermediate thin film layer having a thickness between 1 and 10 nm and a second oxide superconductor thin film layer on a substrate in this order, wherein before said non-superconducting intermediate layer is deposited, said substrate on which said first oxide superconductor thin film layer has been deposited previously is heated at a temperature between 600.degree. and 650.degree. C. for at least 5 minutes in the presence of oxygen and in that said first oxide superconductor thin film layer is deposited in a different deposition chamber from said non-superconducting intermediate layer and wherein said substrate on which said first oxide superconductor thin film layer has been previously deposited is heated at a temperature between 200.degree. and 400.degree. C. during said deposition of said non-superconducting intermediate thin film layer.
A process for producing a superconducting junction comprising the steps of:
- depositing on a substrate a first oxide superconductor thin film layer having an axis oriented with respect to the substrate;
- heating the substrate to a temperature of from 600.degree. to 650.degree. C. at least 5 minutes in the presence of oxygen;
- depositing on the first oxide superconductor thin film layer a non-superconducting intermediate layer having a thickness of from 1 to 10 nm;
- wherein said first oxide superconductor thin film layer is deposited in a different deposition chamber from said non-superconducting intermediate layer;
- depositing on the intermediate layer a second oxide superconductor thin film layer;
- and
- orienting the second oxide superconductor thin film layer to the same orientation as the first oxide superconductor layer by heating the substrate to a temperature of from 200.degree. C. to 400.degree. C. during the deposition of the intermediate layer.
Dependencies are inferred from the claim text.