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US 5,292,401 AGranted
Method of forming a fine pattern
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorMasahiro Yoneda
Life of this patent
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Abstract
A fine pattern forming apparatus includes a stage and an opposed electrode at least one of which is made of a magnetic material. A magnetic field is applied to this stage or opposed electrode to provide a predetermined gap between the stage and the opposed electrode for a fine pattern formation. In consequence, optimum etching conditions (including etching uniformity, etch rate and etching direction) can be assured without generating dust. As a result, damage caused by the plasma can be reduced, and the etch rate can be increased.
Claims9
A fine pattern forming method comprising the steps of:
- placing a sample on which a fine pattern is to be formed on a stage in a vacuum chamber;
- evacuating the interior of said vacuum chamber to achieve a predetermined degree of vacuum;
- supplying a reactive gas into said vacuum chamber;
- applying a magnetic field to levitate one of said stage and an opposed electrode located in said vacuum chamber to maintain a predetermined gap between said stage and said opposed electrode;
- and
- generating a plasma of said reactive gas within said vacuum chamber by said stage and said opposed electrode, thereby forming a fine pattern in said sample.
3 more elements
Dependencies are inferred from the claim text.