Plasma processing chamber
AssigneeM. C. Electronics Co., Ltd.
InventorsShigekazu Takashima, Norio Sakamoto
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AssigneeM. C. Electronics Co., Ltd.
InventorsShigekazu Takashima, Norio Sakamoto
Estimating the term…
Disclosed herein is a coaxial feeding-type plasma processing chamber or an opposed electrode-type plasma processing chamber using an Etch-tunnel comprising: a cylindrical treatment chamber having a gas-introducing mechanism and a gas-exhausting mechanism, and equipped with a heating mechanism at the periphery thereof; an external electrode disposed in close contact to the outer periphery of the cylindrical treatment chamber; and a metal cylindrical member disposed coaxially at a predetermined gap to the inner wall of the cylindrical treatment chamber and a having a plurality of small apertures in the side wall thereof, the gas-introducing mechanism being composed of a gas-introducing pipe having a plurality of gas-blowout means and disposed along the longitudinal direction of the cylindrical treatment chamber, and a gas reservoir connected by way of a pipeline; the gas-exhausting mechanism being composed of a gas-exhausting pipe having a plurality of gas-suction apertures and disposed along the longitudinal direction of the cylindrical treatment chamber and a vacuum means connected by way of a pipeline; and at least the gas-exhausting pipe being disposed to the inside of the metal cylindrical member.
A coaxial feeding-type plasma processing chamber or an opposed electrode-type plasma processing chamber using an Etch-tunnel comprising:
Dependencies are inferred from the claim text.