Microwave plasma CVD apparatus comprising dual plungers for two-dimension plasma position adjustment
AssigneeIdemitsu Petrochemical Co., Ltd.
InventorsHaruo Yasui, Munehiro Chosa
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AssigneeIdemitsu Petrochemical Co., Ltd.
InventorsHaruo Yasui, Munehiro Chosa
Estimating the term…
A microwave plasma chemical vapor deposition apparatus allows the position of a plasma to be two-dimensionally adjusted in a reaction tube. A second plunger 9 (plunger assembly 8) is disposed on an H plane of a microwave waveguide 2a connected to a microwave oscillator 1 adjacent to an end 2b of the microwave waveguide 2a in facing relationship to a reaction region 7. The plunger 9 is actuated to move the plasma also in a direction perpendicular to the direction of travel of a microwave in the microwave waveguide 2a for two-dimensionally adjusting the position of the plasma. Using the microwave plasma chemical vapor deposition apparatus, a diamond film having a uniform quality and a uniform thickness is formed as on a substrate.
A microwave plasma chemical vapor deposition apparatus comprising a microwave oscillator, a microwave waveguide, a first plunger mounted in an end of the microwave waveguide, and a reaction tube extending through the microwave waveguide perpendicularly to an E plane thereof adjacent to the end of the microwave waveguide, said microwave waveguide and said reaction tube jointly defining a reaction region at an intersection thereof, wherein the improvement comprises a second plunger disposed on an H plane of said microwave waveguide adjacent to the end thereof, said second plunger extending perpendicularly to said microwave waveguide and said reaction tube and facing said reaction region.
Dependencies are inferred from the claim text.