Automatic inspecting apparatus for precharge of data line in memory device

An automatic inspecting apparatus for the precharge of a data line in a memory device in which said data line is precharged before reading out the data stored in memory cells, said apparatus comprising:

• means for detecting a change in an address applied to said memory cells for generating clock signals;
• precharging means to be precharged simultaneously with said data line by said clock signals, said precharging means comprising precharge signal generating means which includes two MOS transistors respectively receiving said clock signals and a signal representing address changes of said memory cells, and an inverter connected to said MOS transistors, and memory means comprising a first group of further MOS transistors connected to one of said MOS transistors in said precharge signal generating means, a second group of further MOS transistors connected to said inverter, for precharging dummy memory cells from an output generated by said precharge signal generating means;
• sending means connected to said precharging means to determine a precharged state thereof;
• and
• storing means connected to an output of said sensing means to temporarily store output signals representative of the sensed precharge state, said output signals controlling clock signals supplied to a sense amplifier for precharging said sense amplifier.