MOS fuse with oxide breakdown and application thereof to memory cards

A MOS fuse with oxide breakdown, wherein said fuse is formed by a MOS cell comprising at least one electrode obtained by doping of a substrate, said substrate being coated with silicon oxide in which there is embedded at least one gate of polycrystalline silicon connected to a contact terminal, a thickness of oxide between the gate and the electrode being thin on all or on a part of the oxide between the gate and the electrode to form an oxide window of sufficiently small thickness to have a tunnel effect thereat, and wherein an irreversible breakdown of the oxide is obtained at the window by application of an electrical field, greater than a threshold of breakdown of said oxide of said oxide window which is between the gate and the electrode, wherein said MOS cell is a modified electrically programmable MOS cell comprising a second electrode formed by doping of the substrate, and a second gate separated from the first one by a layer of oxide, and the two gates are interconnected to speed the application of the electrical field for breakdown of the oxide in the oxide window.