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AssigneeSamsung Electronics Co., Ltd.
InventorSeung H. Moon
Estimating the term…
A compound semiconductor device and a process for manufacturing it is disclosed. The process comprises the steps of forming a first conduction type first clad layer, a first conduction type or second conduction type activated layer, a second conduction type second clad layer, and a second conduction type cap layer upon a first conduction type semiconductor substrate, forming a first conduction type electrode and a second conduction type electrode, and forming a rectangular pole shaped laser diode, a triangular pole shaped detecting photo-diode, and a triangular pole shaped receiving photo-diode by carrying out a single round of anisotropic etching. According to the present invention, the high density can be easily realized, so that the power consumption and the manufacturing cost can be saved.
A compound semiconductor device comprising:
A compound semiconducting device comprising a substrate, a rectangular shaped laser diode extending perpendicularly from said substrate, a triangular shaped detecting photodiode extending perpendicularly from said substrate in adjacent relation to said laser diode, said laser diode having a light emitting surface and said detecting photodiode having a reflective light receiving surface facing said light emitting surface of said laser diode, said light emitting surface and said light receiving surface being disposed in planes perpendicular to said substrate and at an angle relative to one another such that a summation light beam emitted from said laser diode will be at a certain position and angle relative to the light receiving surface of said detecting photodiode so that light reflected by said light receiving surface will not impinge on said light emitting surface, and a triangular shaped receiving photodiode extending perpendicularly from said substrate in adjacent relation to said detecting photodiode on a side thereof remote from said laser diode.
Dependencies are inferred from the claim text.