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US 5,291,041 AGranted
AlGaAs/GaAs thyristor
AssigneeThe United States of America as represented by the Secretary of the Army
InventorsTerence Burke, Maurice Weiner, Jian H. Zhao
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Abstract
The present invention comprises a semi-insulating layer of GaAs with p+ and layers of aluminum gallium arsenide AlGaAs grown on one side of the semi-insulating GaAs and with p and n+ layers of AlGaAs grown on the other side of the semi-insulating GaAs. Ohmic contacts are grown on both sides of the thyristor as well as low temperature GaAs to provide for surface passivity.
Claims3
A photoconductive thyristor comprising:
- a semi-insulating substrate made of a III-V semiconducting material, the substrate having a top and bottom surface;
- a layer of n doped semiconductor material grown on the top surface of the substrate;
- a layer of p+ doped semiconductor material grown on the n doped layer;
- a first layer of semiconductor grown at a low temperature on the p+ doped layer for passivation;
- a layer of p doped semiconductor material grown on the bottom surface of the substrate;
- a layer of n+ doped semiconductor material grown on the p doped layer;
- a second layer of semiconductor grown at a low temperature on the n+ doped layer for passivation;
- and
- at least a first ohmic contact etched within the first layer of semiconductor grown at low temperature;
- and
- at least a second ohmic contact etched within the second layer of semiconductor grown at low temperature;
- wherein the n, p+, p and n+ layers all have a wider energy band gap than the substrate and wherein the low temperature semiconductor layers have approximately the same energy band gap as the substrate.
9 more elements
Dependencies are inferred from the claim text.