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US 5,291,040 AGranted
Deactivatable thyristor with turn-off current path
AssigneeSiemens Aktiengesellschaft
InventorsKlaus-Guenter Oppermann, York Gerstenmaier, Michael Stoisiek
Life of this patent
Estimating the term…
Abstract
An emitter of a thyristor is divided into a plurality of emitter regions. An electrode is provided next to each of these regions, and a turn-off current path proceeds via this electrode from the base adjoining the emitter region over a first field effect transistor to a main terminal of the thyristor. Every emitter region is also connected to this main terminal via a second field effect transistor which is integrated into the semiconductor body of the thyristor, or is manufactured in thin-film technology.
Claims15
A gate turn-off thyristor, comprising:
- an emitter of a first conductivity type and comprising a plurality of emitter regions, each of which is connected by a resistor element to a first main terminal;
- a base of a second conductivity type adjacent to the plurality of emitter regions;
- a base of a first conductivity type adjacent to the base of second conductivity type;
- an emitter of second conductivity type adjacent to the base of the first conductivity type and having a second main terminal connected thereto;
- a turn-off current path from the second conductivity type base to the first main terminal being provided at each emitter region by an electrode which is connected to said first main terminal, and a first field effect transistor connected between said electrode and second conductivity type base for activating the turn-off current path upon deactivation of the thyristor at each emitter region, gates associated with each of the first field effect transistors connecting to a shared first gate terminal;
- and
- each of said resistor elements comprising a second field effect transistor comprised of the respective emitter region, a semiconductor region of first conductivity type inserted int he second conductivity base at a spacing from said first conductivity semiconductor region, and a portion of the second conductivity base lying between the first conductivity semiconductor region and the respective emitter region, and a gate electrode overlying said portion of said second conductivity type base and insulated therefrom by an insulating layer.
4 more elements
A gate turn-off thyristor, comprising:
- an emitter of a first conductivity type and comprising a plurality of emitter regions, each of which is connected by a resistor element to a first main terminal;
- a base of a second conductivity type adjacent to the plurality of emitter regions, the emitter regions lying at a principal surface of the base;
- a base of a first conductivity type adjacent to the base of second conductivity type;
- an emitter of second conductivity type adjacent to the base of the first conductivity type and having a second main terminal connected thereto;
- a turn-off current path from the second conductivity type base to the first main terminal being provided at each emitter region by an electrode which is connected to said first main terminal, and a first field effect transistor connected between said electrode and second conductivity type base for activating the turn-off current path upon deactivation of the thyristor at each emitter region, gates associated with each of the first field effect transistors connecting to a shared first gate terminal;
- and
- each of said resistor elements comprising a thin film technology second field effect transistor comprised of first and second terminal regions of first conductivity type and a channel region of second conductivity type between the terminal regions, first and second terminal regions and channel region being insulated from said principal surface, the first terminal region contacting the respective emitter region via a hole and an insulating layer beneath the second field effect transistor, the second terminal region connecting to the first main terminal, and the channel region being covered by a gate electrode arranged in insulated fashion above the channel region.
4 more elements
A gate turn-off thyristor, comprising:
- a plurality of first conductivity type emitter regions, each of which is connected by a resistor element to a first main terminal;
- a second conductivity type base receiving he plurality of emitter regions therein at a surface thereof;
- a first conductivity type base adjacent to the second conductivity type base;
- a second conductivity type emitter adjacent to the first conductivity type base and having a second main terminal connected thereto;
- an electrode connecting to a second conductivity type semiconductor zone in a portion of each emitter region, each of said electrodes connecting to said first main terminal;
- a first field effect transistor at each emitter region and formed of a gate overlying the second conductivity type semiconductor zone, said portion of the respective emitter region, and a portion of the second conductivity type base;
- and
- each of said resistor elements comprising a second field effect transistor having a gate overlying a channel, said channel connecting the respective emitter region to the first main terminal when activated.
5 more elements
Dependencies are inferred from the claim text.