Microelectronic superconducting crossover and coil
AssigneeThe Regents of the University of California
InventorsFrederick C. Wellstood, John J. Kingston, John Clarke
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Abstract
A microelectronic component comprising a crossover is provided comprising a substrate, a first high T.sub.c superconductor thin film, a second insulating thin film comprising SrTiO.sub.3 ; and a third high T.sub.c superconducting film which has strips which crossover one or more areas of the first superconductor film. An in situ method for depositing all three films on a substrate is provided which does not require annealing steps and which can be opened to the atmosphere between depositions.
Claims13
A microelectronic device comprising a substrate;
- a first superconductor thin film layer of high T.sub.c superconductor metal oxide material capable of maintaining superconductivity at the boiling point of liquid nitrogen;
- a second insulating thin film layer covering at least a portion of said first superconductor thin film layer;
- said second insulating thin film layer being comprised of a material having high resistivity at temperatures below the T.sub.c of said first thin film, said second insulating thin film layer having a microstructure which is epitaxial or highly oriented sufficient to support epitaxial growth thereon of a third layer within a range of deposition temperatures, the third layer comprising a high T.sub.c superconductive material capable of maintaining superconductivity at the boiling point of liquid nitrogen, said second insulating thin film layer further having interdiffusion and chemical reactivity characteristics in relation to the material of said first superconductor thin film layer sufficient to maintain its insulating characteristics and not to degrade said first superconductor thin film layer when heated to a temperature within the range of deposition temperatures of the third layer, said second insulating thin film layer further having substantial coverage of and adhesion to said first superconductor thin film layer, and said second insulating thin film layer further having a high diffusion rate for oxygen in the range of deposition temperatures of the third layer.
A thin film microelectronic structure comprising a substrate, a first thin film epitaxial layer of a high T.sub.c superconductive material, a second thin film layer on the opposite side of said first thin film epitaxial layer from said substrate, said second thin film layer being comprised of a material having high resistivity at temperatures below the T.sub.c of said first thin film epitaxial layer, and a third thin film epitaxial layer of a high T.sub.c superconductive material formed at a selected deposition temperature on the opposite side of said second thin film layer from said first thin film epitaxial layer, each of the high T.sub.c superconductive materials of said first and third thin film epitaxial layers capable of maintaining superconductivity at the boiling point of liquid nitrogen, said second thin film layer having a microstructure which is epitaxial or highly oriented sufficient to support epitaxial growth thereon of said third thin film epitaxial layer, said second thin film layer further having interdiffusion and chemical reactivity characteristics in relation to the material of said first thin film epitaxial layer sufficient to maintain its insulating characteristics and not to degrade said first thin film epitaxial layer at said selected deposition temperature, said second thin film layer further having substantial coverage of and adhesion to said first thin film epitaxial layer, and said second thin film layer further having a high diffusion rate for oxygen at said selected deposition temperature of said third thin film epitaxial layer.
Dependencies are inferred from the claim text.