Non-linear quantum dot optical device
AssigneeHitachi, Ltd.
InventorsJeremy Allam, Mathias Wagner
Life of this patent
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Abstract
A non-linear optical device utilizes laterally asymmetrical quantum dot structures (D1-D5) that are tunable in terms of their lateral asymmetry by bias potentials (V1, V2) applied to laterally extending electrode structures (13, 14).
Claims21
A non-linear optical device comprising at least one quantum dot structure including,
- means for defining a potential well configuration for a charge carrier in a quantized energy state, the well configuration including at least one well having a given depth and lateral extent, and
- means for applying an electrical bias to the well configuration to alter the lateral extent thereof and thereby control an asymmetry therein that manifests a non-linear optical characteristic in response to incident radiation.
A quantum dot structure comprising means for defining a potential well configuration for a charge carrier in a quantized energy state, the well configuration having a given depth and lateral extent, and means for applying an electrical bias to the well to control the lateral extent thereof and thereby control an asymmetry therein.
Dependencies are inferred from the claim text.