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US 5,290,733 AGranted
Method of manufacturing semiconductor devices including depositing aluminum on aluminum leads
AssigneeKabushiki Kaisha Toshiba
InventorsNobuo Hayasaka, Ayako Shimazaki, Haruo Okano
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Abstract
A method of manufacturing semiconductor devices comprises steps of selectively forming metal leads on the surface a semiconductor substrate, and immersing the semiconductor substrate in a solution containing dissolved metal for depositing the dissolved metal on the surfaces of the metal leads. The solution contains dissolved metal having an ionization tendency equal to or smaller than ionization of the metal leads.
Claims6
A method of manufacturing semiconductor devices, comprising the steps of:
- forming aluminum or aluminum alloy leads on the surface of a semiconductor substrate, including a step of dry etching;
- and
- immersing the semiconductor substrate in a solution containing aluminum, for depositing aluminum on the exposed surfaces of the leads and for eliminating at least one of F and Cl adhering to the leads due to said dry etching, thereby suppressing electromigration and corrosion of the leads.
Dependencies are inferred from the claim text.