Stacked type capacitor having a dielectric film formed on a rough surface of an electrode and method of manufacturing thereof
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsYoshio Hayashide, Wataru Wakamiya
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Abstract
A lower electrode of a stacked capacitor in accordance with the present invention is formed of a silicon layer formed by low pressure CVD method. The silicon layer is formed by thermal decomposition of monosilane gas at a prescribed temperature. By setting partial pressure of the monosilane gas and formation temperature at prescribed values, the silicon layer is formed to be in a transitional state between poly crystal and amorphous. Such silicon layer has large concaves and convexes on the surface thereof. Consequently, opposing areas of the electrodes of the capacitor can be increased, and therefore electrostatic capacitance of the capacitor is also increased.
Claims24
A method of manufacturing on a semiconductor substrate a stacked capacitor, comprising the steps of:
- forming on said substrate a first electrode layer including transitional silicon in a transitional state between poly crystal and amorphous;
- forming a dielectric layer on a surface of said first electrode layer;
- and
- forming a second electrode layer on a surface of said dielectric layer.
A method of manufacturing on a semiconductor substrate a stacked capacitor, comprising the steps of:
- forming a polycrystalline silicon layer including impurities on said semiconductor substrate;
- forming a silicon layer in a transitional state between poly crystal and amorphous on a surface of said polycrystalline silicon layer;
- forming a dielectric layer on a surface of said silicon layer;
- forming an electrode layer on a surface of said dielectric layer;
- and
- by maintaining said semiconductor substrate having at least said silicon layer formed thereon at a high temperature, diffusing the impurities in said polycrystalline silicon layer to said silicon layer.
A method of manufacturing on a semiconductor substrate a stacked capacitor, comprising the steps of:
- forming a silicon layer in a transitional state between poly crystal and amorphous on said semiconductor substrate;
- forming a polycrystalline silicon layer including impurities on a surface of said silicon layer;
- forming a dielectric layer on a surface of said polycrystalline silicon layer;
- forming an electrode layer on a surface of said dielectric layer;
- and
- by maintaining said semiconductor substrate having at least said silicon layer and said polycrystalline silicon layer formed thereon at a high temperature, diffusing said impurities in said polycrystalline silicon layer to said silicon layer.
A method of manufacturing on a semiconductor substrate a stacked capacitor, comprising the steps of:
- forming an impurity region on a main surface of said semiconductor substrate;
- forming a first insulating layer having a first opening reaching said impurity region on the main surface of said semiconductor substrate;
- forming a first polycrystalline silicon layer on a surface of said first insulating layer, in said first opening and on a surface of said impurity region and patterning the same to a prescribed shape;
- forming a second insulating layer entirely on the surface of said semiconductor substrate;
- forming a second opening reaching said first polycrystalline silicon layer in said second insulating layer;
- forming a second polycrystalline silicon layer on a surface of said second insulating layer and in said second opening;
- patterning said second polycrystalline silicon layer to leave said second polycrystalline silicon layer on side walls of said second opening;
- after removing said second insulating layer, forming a silicon layer in a transitional state between poly crystal and amorphous on the surfaces of said first and second polycrystalline silicon layers;
- forming a dielectric layer on the surface of said silicon layer;
- and
- forming an electrode layer on a surface of said dielectric layer.
A method of manufacturing on a semiconductor substrate a stacked capacitor, comprising the steps of:
- forming an impurity region on a main surface of said semiconductor substrate;
- forming a first insulating layer having a first opening reaching said impurity region on the main surface of said semiconductor substrate;
- forming a first polycrystalline silicon layer on a surface of said first insulating layer, in said first opening and on a surface of said impurity region and patterning the same to a prescribed shape;
- forming a second insulating layer entirely on the surface of said semiconductor substrate;
- forming a second opening reaching a surface of said first polycrystalline silicon layer in said second insulating layer;
- forming a second polycrystalline silicon layer on a surface of said second insulating layer and in said second opening;
- patterning said second polycrystalline silicon layer to leave said second polycrystalline silicon layer on side walls of said second opening;
- after removing said second insulating layer, forming a silicon layer in a transitional state between poly crystal and amorphous on the surfaces of said first and second polycrystalline silicon layers;
- forming a third polycrystalline silicon layer on a surface of said silicon layer;
- forming a dielectric layer on the surface of said third polycrystalline silicon layer;
- forming an electrode layer on a surface of said dielectric layer.
Dependencies are inferred from the claim text.