Transistor with inverse silicide T-gate structure

A method of making a semiconductor device comprising the steps of forming a gate structure comprising a thin oxide and polysilicon layer, said thin oxide being between said substrate and said polysilicon and on the surfaces of polysilicon;

• forming source/drain regions on opposed sides of said gate structure, said forming being by ion implantation to form lightly and heavily doped regions, said implantation being a single implant through L-shaped silicon spacers and forming said lightly doped regions under said spacers;
• said gate structure being an inverse T-gate being made by the further steps of forming said L-shaped silicon spacers on opposed sides of said gate structure by depositing a silicon layer and then a sacrificial layer over said thin oxide and polysilicon layers, and selectively removing said silicon layer and said sacrificial layer to form said L-shaped silicon spacer.