Method of making dielectrically isolated metal base transistors and permeable base transistors
AssigneeU.S. Philips Corporation
InventorRanjana Pandya
Life of this patent
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Abstract
The invention is directed to method for making a dielectrically isolated metal base transistors and permeable base transistors. The first step is the production of a silicon/metal silicide/silicon heterostructure. Thereafter the surface of the heterostructure is oxidized so as to provide a bonding surface. A second silicon substrate has its surface oxidized and is bonded to the heterostructure. The surface of the heterostructure is then etched back so as to expose individual transistors which are disposed on the oxidized surface of the second substrate. With suitable processing of the metal silicide layer it may act as the base region for a metal base or permeable base transistor.
Claims6
A method for manufacturing a dielectrically isolated metal silicide transistor comprising the steps of:
- a) producing a silicon/metal silicide/silicon heterostructure;
- b) bonding the silicon/metal silicide/silicon heterostructure to an insulating substrate;
- c) masking the heterostructure;
- and
- d) etching through selected portions of the heterostructure to provide free standing transistors which are separated from each other and disposed on said substrate.
Dependencies are inferred from the claim text.