Process for forming crystalline semiconductor film
AssigneeCanon Kabushiki Kaisha
InventorsNobuhiko Sato, Takao Yonehara, Hideya Kumomi
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Abstract
A process for forming a crystalline semiconductor film by crystallization through solid phase growth of an amorphous semiconductor film on a base material comprises implanting ions of an element constituting the amorphous semiconductor film into the amorphous semiconductor film except a fine region therein, then heat-treating the amorphous semiconductor film at a temperature not higher than the melting point of the amorphous semiconductor film, thereby generating a crystal nucleus in the fine region, and making a crystal grow at the crystal nucleus as growth point.
Claims10
A process for forming a polycrystalline semiconductor film by crystallization through solid phase growth of an amorphous semiconductor film on a base material, which comprises:
- (i) selectively implanting ions of an element constituting the amorphous semiconductor film into the amorphous semiconductor film except at a fine region having a mask provided thereon and corresponding to an area not more than 5 .mu.m in diameter therein,
- (ii) heat-treating the amorphous semiconductor film at a temperature not higher than the melting point of the amorphous semiconductor film, thereby generating a crystal nucleus in the fine region, and
- (iii) making a crystal grow at the crystal nucleus as a growth point.
A process for forming a polycrystalline semiconductor film by crystallization through solid phase growth of an amorphous semiconductor film on a base material, which comprises:
- (i) selectively implanting ions of an element constituting the amorphous semiconductor film into the amorphous semiconductor film such that a fine region having a mask provided thereon, having an area not more than 5 .mu.m in diameter and having a lower degree of implantation damage than that of the other remaining regions is created at the boundary between the amorphous semiconductor film and the base material,
- (ii) heat-treating the amorphous semiconductor film at a temperature not higher than the melting point of the amorphous semiconductor film, thereby generating only a single crystal-nucleus from the fine region, and
- (iii) making a crystal grow at the crystal nucleus as a growth point.
A process for forming a polycrystalline semiconductor film, which comprises:
- (i) providing a region having a mask provided thereon and small enough to form only a single crystal-nucleus by heat treatment at a desired position of an amorphous semiconductor film provided on a base material;
- (ii) selectively implanting ions of the element constituting the amorphous semiconductor film into the amorphous semiconductor film in areas not being provided with the mask;
- (iii) carrying out a first heat treatment of the amorphous semiconductor film at a first temperature not higher than the melting point of the amorphous semiconductor film, thereby forming only a single crystal-nucleus in the small region;
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- (iv) carrying out a second heat treatment of the amorphous semiconductor film at a second temperature lower than the first temperature, thereby making a crystal grow at the nucleus as a growth point.
Dependencies are inferred from the claim text.