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US 5,290,711 AGranted
Method for fabricating semiconductor devices which lessens the effect of electrostatic discharge
AssigneeNEC Corporation
InventorMasayuki Yanagisawa
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Abstract
In a method for fabricating a semiconductor device of the present invention, photoresist layers are not formed on a scribe line regions entirely. Therefore, electric charge can be transferred from device regions to out of a wafer by surface conduction, when impurity layers are formed on a substrate by ion implantation.
Claims8
A method for fabricating semiconductor devices, comprising the steps of:
- defining device regions and scribe line regions on a semiconductor substrate, each of said device regions being surrounded by said scribe line regions;
- providing a photoresist layer on selected areas of said scribe line regions;
- implanting ions into remaining areas of said semiconductor substrate, said remaining areas being not covered with said photoresist layer;
- removing said photoresist layer from said semiconductor substrate;
- and
- providing an interconnection layer on said scribe line regions, said interconnection layer being in contact via said selected areas with said semiconductor substrate.
3 more elements
Dependencies are inferred from the claim text.