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US 5,290,588 AGranted
TiW barrier metal process
AssigneeAdvanced Micro Devices, Inc.
InventorsJeremias D. Romero, Homi Fatemi, Eugene A. Delenia, Muhib M. Khan
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AssigneeAdvanced Micro Devices, Inc.
InventorsJeremias D. Romero, Homi Fatemi, Eugene A. Delenia, Muhib M. Khan
Estimating the term…
An improved process is provided for forming a multilayer structure (18) suitable for tape automated bonding thereto or for forming contacts. In the process, a first layer (12) of aluminum is formed on a substrate (10), a second layer (14) of a TiW alloy is formed on the first layer of aluminum, and a third layer (16) of gold is formed on the second layer of the TiW alloy, to which third layer of gold bonding is done. The improvement comprises annealing the second layer of the TiW alloy in an inert atmosphere at a temperature less than about 500.degree. C. for a period of time sufficient to form a film of an Al--TiW phase (20), believed to comprise TiAl.sub.3, at the interface between the first layer of aluminum and the second layer of the TiW alloy. The annealing is done prior to forming the third layer of gold on the second layer of the TiW alloy.
A process for forming a multi-layer structure, wherein a first layer of aluminum is formed on a substrate and a second layer consisting essentially of a TiW alloy is formed on said first layer of aluminum to form a layered structure, the improvement comprising (a) annealing said layered structure in an inert atmosphere at a temperature ranging from about 400.degree. to 500.degree. C. for a period of time sufficient to form a film of an Al--TiW phase at the interface between said first layer of aluminum and said second layer of said TiW alloy, said film of said Al--TiW phase having a thickness of at least about 300 .ANG., and (b) forming a gold layer on said TiW layer following said annealing of said layered structure.
A process for forming a multi-layer structure suitable for tape automated bonding thereto, wherein a first layer of aluminum is formed on a substrate, a second layer consisting essentially of a TiW alloy is formed on said first layer of aluminum to form a layered structure, and a third layer of gold is formed on said second layer of said TiW alloy, to which third layer of gold bonding is done, the improvement comprising annealing said layered structure in an inert atmosphere at a temperature ranging from about 400.degree. to 500.degree. C. for a period of time sufficient to form a film of an Al--TiW phase at the interface between said first layer of aluminum and said second layer of said TiW alloy, said film of said Al--TiW phase having a thickness of at least about 300 .ANG., said annealing done prior to forming said third layer of gold on said second layer of said TiW alloy.
Dependencies are inferred from the claim text.