Method of manufacturing a thin Hg.sub.1-x Cd.sub.x Te film
AssigneeNEC Corporation
InventorTokuhito Sasaki
Life of this patent
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Abstract
In a method of manufacturing a Hg.sub.1-x Cd.sub.x Te (x=0 to 1) infrared detector using GaAs as a substrate, there is provided a method of depositing a HgCdTe film that has high crystalline quality. By changing the substrate temperature, it is possible to control the plane orientation of a CdTe buffer layer formed on a GaAs (211)B substrate. When the substrate temperature is high, the buffer layer is formed with plane orientation (133) and when the substrate temperature is low, the buffer layer is formed with plane orientation (211). In the former, it is possible to form a film having high crystalline quality as compared with that of a film in the latter.
Claims15
A method of manufacturing a thin Hg.sub.1-x Cd.sub.x Te (x=0 to 1) film on a GaAs(211)B substrate through a CdTe buffer layer by molecular beam epitaxy, which comprises the steps of:
- heat treating said GaAs(211)B substrate at approximately 550.degree. C. while exposing the surface thereof to a Te flux;
- and
- forming said CdTe buffer layer at a prescribed substrate temperature to control the plane orientation to result in a prescribed orientation.
A method of manufacturing a thin Hg.sub.1-x Cd.sub.x Te (x=0 to 1) film on a GaAs(211)B substrate through a CdTe buffer layer by molecular beam epitaxy, which comprises the steps of:
- heat treating said GaAs(211)B substrate at approximately 550.degree. C. while exposing the surface thereof to a Te flux, forming said CdTe buffer layer on the treated substrate surface at a substrate temperature of not less than 200.degree. C. and less than 290.degree. C., and then forming said Hg.sub.1-x Cd.sub.x Te film on the CdTe buffer layer having a resulting (211)B growth orientation.
A method of manufacturing a thin Hg.sub.1-x Cd.sub.x Te (x=0 to 1) film on a GaAs(211)B substrate through a CdTe buffer layer by molecular beam epitaxy, which comprises the steps of:
- heat-treating said GaAs(211)B substrate at approximately 550.degree. C. while exposing the surface thereof to a Te flux, forming said CdTe buffer layer on the treated substrate surface at a substrate temperature between 300.degree. C. and 360.degree. C., and then forming said Hg.sub.1-x Cd.sub.x Te film on the CdTe buffer layer having a resulting (133) growth orientation.
Dependencies are inferred from the claim text.