Plasma etching apparatus
AssigneesTokyo Electron Limited, Kabushiki Kaisha Toshiba
InventorsToshihisa Nozawa, Junichi Arami, Keiji Horioka, Isahiro Hasegawa
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Abstract
A plasma etching apparatus comprising a susceptor for holding a semiconductive wafer, a cooling jacket having a coolant of a large cooling capacity and capable of quickly cooling said susceptor to an intended low temperature, a process chamber enclosing the susceptor and the cooling jacket, a gas discharging mechanism for evacuating the process chamber, an insulating member interposed between the susceptor and the cooling jacket, a gas supply device for supplying gas to an O-ring holding groove arranged on the interface regions of the susceptor, the insulating member and the cooling section and a pressure control mechanism for controlling the pressure of the supplied gas.
Claims16
A plasma etching apparatus comprising:
- a susceptor for holding an object to be etched;
- a cooling section for cooling said susceptor;
- a process chamber enclosing the susceptor and the cooling section;
- exhausting means for exhausting a gas in the process chamber;
- gas supply means for supplying a heat transfer gas at a interface region between the susceptor and the cooling section;
- heating means for heating the susceptor;
- and
- temperature detecting means for detecting a temperature of the susceptor, to thereby control heating of said heating means based on the detected temperature.
Dependencies are inferred from the claim text.