Metal-ceramic structure with intermediate high temperature reaction barrier layer
AssigneeGeneral Electric Company
InventorsHerman F. Nied, Richard L. Mehan
Life of this patent
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Abstract
A Si--SiC ceramic layer is bonded to a non-porous SiC substrate with the Si etched from the layer to form a relatively porous surface on the otherwise non-porous high strength SiC substrate. A quartz layer is softened by heating and forced into the pores of the porous layer to form a mechanical bond to the SiC substrate. A refractory metal layer is bonded to the quartz layer to complete the joint. A refractory metal support component is then bonded to the refractory layer whereby the quartz serves as a high strength, high temperature reaction barrier between the metal of the refractory layer and the silicon of the SiC substrate.
Claims8
A method of making a ceramic-metal structure comprising the steps of:
- etching a surface of a silicon based ceramic substrate to effect removal of surface silicon therefrom, thereby producing a porous surface;
- bonding a layer of glass to said porous surface;
- and
- bonding a refractory metal member to said layer of glass.
A method of making a ceramic-metal structure comprising the steps of:
- bonding a layer of a silicon-silicon based ceramic composite to a silicon based ceramic substrate;
- etching a surface of said layer of a silicon-silicon based ceramic composite to effect removal of surface silicon therefrom, thereby producing a porous surface;
- bonding a layer of glass to said porous surface;
- bonding a layer of refractory metal to said layer of glass;
- and
- bonding a metal member to said layer of refractory metal.
Dependencies are inferred from the claim text.