Dynamic random access memory with low noise characteristics
AssigneesKorea Electronics and Telecommunications Research Institute, Korea Telecommunications Authority
InventorsJin-Hyo Lee, Kyu-Hong Lee
Life of this patent
Estimating the term…
Abstract
A dynamic random access memory (DRAM) with low noise characteristics comprises a plurality of memory cells each consisting of a pair of reference memory cells respectively arranged between a word line and a pair of adjacent bit lines. The reference memory cells store signals of opposite levels corresponding to one bit of information. Each of the reference memory cells consists of a capacitor and switching transistor. One end of the capacitor is connected to the collector of the transistor. The other end of the capacitor is connected to one of the pair of bit lines adjacent thereto. The base of the transistor is connected to the word line, and the emitter of the transistor is completed to receive a reference voltage.
Claims6
A DRAM (dynamic random access memory) with low noise characteristics, said memory comprising:
- a plurality of memory cells, each memory cell serving as one bit and consisting of a pair of reference memory cells respectively arranged between a word line and a pair of adjacent bit lines, each one of said pair of reference memory cells being driven by the word line;
- said reference memory cells storing signals of opposite levels corresponding to said one bit of information;
- and wherein
- each of said reference memory cells consists of a capacitor and a switching transistor.
Dependencies are inferred from the claim text.