High-speed bias-stabilized current-mirror referencing circuit for non-volatile memories

A circuit for providing reference voltages to be used by sense amplifiers of output circuitry of an integrated circuit memory array to allow the sense amplifiers to ascertain the values stored by memory cells of the array comprising:

• a first branch of the circuit;
• means for providing a first current through the first branch of the circuit;
• a second branch of the circuit including a first transistor device,
• the second branch of the circuit being duplicated a plurality of times to optimize the switching speed of the circuit on power down and power up;
• means for mirroring the first current through the second branch of the circuit including the first transistor device;
• a plurality of output branches of the circuit each connected to provide a reference voltage to a sense amplifier,
• each of the output branches including a second transistor with characteristics essentially identical to the characteristics of the first transistor;
• and
• means for mirroring the current through the first transistor through the second transistor,
• the last mentioned means including means for providing voltages at all terminals of the second transistors equal to the voltages at all terminals of the first transistor.

A circuit for providing reference voltages to be used by sense amplifiers of output circuitry of an integrated circuit memory array to allow the sense amplifiers to ascertain the values stored by memory cells of the array comprising:

• a first branch of the circuit;
• means for providing a first current through the first branch of the circuit;
• a second branch of the circuit including a first transistor device;
• means for mirroring the first current through the second branch of the circuit including the first transistor device;
• a plurality of output branches of the circuit each connected to provide a reference voltage to a sense amplifier,
• each of the output branches including a second transistor with characteristics essentially identical to the characteristics of the first transistor;
• means for mirroring the current through the first transistor through the second transistor,
• the last mentioned means including means for providing voltages at all terminals of the second transistors equal to the voltages at all terminals of the first transistor;
• and
• means for providing a voltage at the gates of the second transistors when power to the circuit is reduced to enable the quick turn on of the second transistors when power to the circuit is increased.

A circuit for providing reference voltages to be used by sense amplifiers of output circuitry of an integrated circuit memory array to allow the sense amplifiers to ascertain the values stored by memory cells of the array comprising:

• a first branch of the circuit;
• means for providing a first current through the first branch of the circuit;
• a second branch of the circuit including a first transistor device,
• means for mirroring the first current through the second branch of the circuit including the first transistor device;
• a plurality of output branches of the circuit each connected to provide a reference voltage to a sense amplifier,
• each of the output branches including a second transistor with characteristics essentially identical to the characteristics of the first transistor;
• and
• means for mirroring the current through the first transistor through the second transistor,
• the last mentioned means including means for providing voltages at all terminals of the second transistors equal to the voltages at all terminals of the first transistor;
• means for rapidly disabling the means for providing a first current through the first branch of the circuit when power to the circuit is reduced;
• and
• means rapidly enabling the means for providing a first current through the first branch of the circuit when power to the circuit is increased.