Memory apparatus using tunnel current techniques

A memory apparatus using tunnel current techniques, comprising:

• a plurality of tunnel current probes fixed to a first substrate;
• a recording element fixed to a second substrate, said recording element including a plurality of memory regions respectively facing said plurality of tunnel current probes;
• moving means for moving at least one of the first and second substrates relative to the other so that each of said plurality of tunnel probes is periodically scanned across its corresponding memory region;
• input means for providing input data to be stored in said plurality of memory regions;
• write means receiving said input data and coupled to said plurality of tunnel current probes for writing said input data into said plurality of memory regions;
• read means coupled to said plurality of tunnel current probes for reading out data written into said plurality of memory regions;
• interface means coupled to the input means and the write means for transferring data into said plurality of memory regions;
• first control means for controlling data transfer between the input means and the interface means;
• and
• second control means for controlling data transfer between the interface means and the write means, said second control means having a data transfer speed which is an integer multiple, other than one, of that of the first control means;
• wherein said write means and said read means are fixed to said first substrate.