Bump electrode structure and semiconductor chip having the same
AssigneeFuji Electric Co., Ltd.
InventorAkira Amano
Life of this patent
Estimating the term…
Abstract
A concave portion having a V-shaped cross section is dug in a semiconductor region of a chip, and a surface of the semiconductor region inclusive of the concave portion is covered with an insulation film. A wiring film connected to an integrated circuit device is disposed on the insulation film. A protection film covering the surface of the chip is provided with a window to expose the concave portion and a portion of the wiring film. The window is covered with a thin metal subbing film connected to the wiring film. A metal protrusion for a bump electrode is provided by an electroplating process so as to protrude from the concave portion.
Claims10
A bump electrode structure for an integrated circuit device, comprising:
- a semiconductor region having a surface and provided with a concave portion having a V-shaped cross section, said semiconductor region including an integrated circuit device having a surface;
- an insulation film covering the surface of said semiconductor region inclusive of said concave portion;
- a metal wiring film disposed on said insulation film and connected to said integrated circuit device;
- a protection film covering said surface of said integrated circuit device and provided with a window in which only a predetermined region of said wiring film and said concave portion are exposed;
- a thin metal subbing film covering said window of said protection film and connected to said wiring film;
- and
- a metal protrusion having a root width of 30 .mu.m or less provided on said subbing film.
A semiconductor integrated circuit device chip with a bump electrode, comprising:
- a semiconductor chip having an integrated circuit device, said device having a surface;
- a semiconductor region included in said semiconductor chip and having a surface, said semiconductor region being provided with a concave portion having a V-shaped cross section;
- an insulation film covering the surface of said semiconductor region inclusive of said concave portion;
- a metal wiring film disposed on said insulation film and connected to said integrated circuit device;
- a protection film covering said surface of said integrated circuit device and provided with a window in which only a predetermined region of said wiring film and said concave portion are exposed;
- a thin metal subbing film covering said window of said protection film and connected to said wiring film;
- and
- a metal protrusion having a root width of 30 .mu.m or less provided on said subbing film.
Dependencies are inferred from the claim text.