Tri-layer titanium coating for an aluminum layer of a semiconductor device
AssigneeIntel Corporation
InventorsMelton C. Bost, Simon Yang, Yeochung Yen, Jim Baldo, Barbara Greenebaum
Life of this patent
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Abstract
A tri-layer titanium coating for an aluminum layer of a semiconductor device. An aluminum layer used for interconnecting individual devices of an integrated circuit is formed on a semiconductor material. A first titanium nitride layer is deposited on the aluminum layer. A titanium layer is deposited on the first titanium nitride layer. A second titanium nitride layer is then deposited on the titanium layer. The tri-layer titanium coating prevents the formation of Al.sub.2 O.sub.3 and AIF.sub.3 during the etching of a via hole in an intermetal dielectric layer deposited above the second titanium nitride layer.
Claims3
A tri-layer titanium coating for an aluminum layer of an interconnection comprising:
- a first TiN layer deposited on said aluminum layer;
- a Ti layer deposited on said first TiN layer;
- and
- a second TiN layer deposited on said Ti layer.
A tri-layer titanium coating for an aluminum layer used in interconnecting semiconductor devices of an integrated circuit comprising:
- a first TiN layer deposited on said aluminum layer, said first TiN layer thick enough to ensure no interaction between said aluminum layer and a subsequently formed Ti layer;
- a Ti layer deposited on said first TiN layer, said Ti layer thick enough to act as an etch stop;
- and
- a second TiN layer deposited on said Ti layer, said second TiN layer having a thickness optimized to minimize optical reflection during alignment.
A tri-layer titanium coating for an aluminum layer used in interconnecting semiconductor devices of an integrated circuit comprising:
- a first TiN layer of approximately 450 .circle. deposited on said aluminum layer;
- a Ti layer of approximately 1000 .ANG. deposited on said first TiN layer;
- and
- a second TiN layer of approximately 450 .ANG. deposited on said Ti layer.
Dependencies are inferred from the claim text.