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US 5,289,031 AGranted
Semiconductor device capable of blocking contaminants
AssigneeKabushiki Kaisha Toshiba
InventorsMasaharu Watanabe, Yoshiko Kunishima
Life of this patent
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Abstract
A semiconductor device comprises a semiconductor substrate having first and second major surfaces, semiconductor elements formed on the first surface of the semiconductor substrate, and a blocking layer formed within the substrate at a given distance from the second major surface for blocking the passage of heavy metals through the semiconductor substrate.
Claims9
A semiconductor device comprising:
- a semiconductor substrate having first and second major surfaces;
- semiconductor elements formed on said first major surface of said semiconductor substrate;
- and
- a blocking layer, formed within said substrate, which spans an entire cross sectional area of said substrate at a given distance from said second major surface, for blocking the passage of heavy metals through said second major surface of said semiconductor substrate into said semiconductor elements, said blocking layer being provided at a position nearer to said second major surface than said first major surface and formed of a chemical compound selected from the group consisting of silicon oxide and silicon nitride.
1 more element
Dependencies are inferred from the claim text.