Light emitting device utilizing cavity quantum electrodynamics

A method of controlling light emitted from a light emitting device which includes a light emitting active layer having a quantum confinement structure, a reflector means enclosing said active layer including a pair of reflectors sandwiching the active layer and having a high reflectance for light generated in said active layer, said method comprising the steps of:

• supplying carriers to said active layer to generate light;
• reflecting the generated light by said pair of reflectors with an optical length between reflectors equal to a wavelength of the light generated in the active layer so as to cause the light to resonate;
• allowing a part of the resonating light to be emitted from said light emitting device;
• and
• allowing a part of the resonating light to be emitted from said light emitting device;
• and
• controlling the light emitted from said light emitting device by applying a reverse bias electric field to said active layer.

A light emitting device comprising:

• a light emitting active layer having a quantum confinement structure;
• a first semiconductor layer disposed in the vicinity of said active layer and having a first conduction type;
• a second semiconductor layer and a third semiconductor layer which have a second conduction type and cooperate with each other in sandwiching said active layer and said first semiconductor layer therebetween, said second and third semiconductor layers each forming a distributed Bragg reflector;
• a base electrode electrically connected to said active layer and said first semiconductor layer;
• and
• an emitter electrode and a collector electrode which are electrically connected to said second semiconductor layer and said third semiconductor layer, respectively.

A method of driving a light emitting device which comprises a light emitting active layer having a quantum confinement structure, a first semiconductor layer disposed in the vicinity of said active layer and having a first conduction type, a second semiconductor layer and a third semiconductor layer which have a second conduction type and which cooperate with each other in sandwiching said active layer and said first semiconductor layer therebetween, said second and third semiconductor layers each forming a distributed Bragg reflector, a base electrode electrically connected to said active layer and said first semiconductor layer, and an emitter electrode and a collector electrode which are electrically connected to said second semiconductor layer and said third semiconductor layer, respectively, said method comprising the steps of:

• applying a forward bias electric field between said emitter electrode and said base electrode so as to supply carriers to said active layer, thereby causing said active layer to generate light;
• reflecting the light generated in said active layer by a Bragg reflector so as to cause resonance;
• allowing a part of the resonating light to be emitted from said light emitting device;
• and
• applying a reverse bias electric field between said collector electrode and said base electrode so as to control the light emitted from said light emitting device.

A light emitting device comprising:

• a substrate;
• a first semiconductor layer comprising a p-type semiconductor and provided on said substrate, said first semiconductor layer forming a distributed Bragg reflector;
• a second semiconductor layer comprising an n-type semiconductor and provided on said first semiconductor layer;
• a light emitting active layer having a quantum well structure and provided on said second semiconductor;
• a third semiconductor layer comprising an intrinsic semiconductor and provided in said active layer;
• a fourth semiconductor layer comprising a p-type semiconductor and provided on said third semiconductor layer, said fourth semiconductor layer forming a distributed Bragg reflector;
• a base electrode contacting said third semiconductor layer;
• an emitter electrode electrically connected to said fourth semiconductor layer;
• and
• a collector electrode contacting said substrate.

A method of driving a light emitting device which comprises a substrate;

• a first semiconductor layer comprising a p-type semiconductor and provided on said substrate, said first semiconductor layer forming a distributed Bragg reflector;
• a second semiconductor layer comprising an n-type semiconductor and provided on said first semiconductor layer;
• a light emitting active layer having a quantum well structure and provided on said second semiconductor;
• a third semiconductor layer comprising an intrinsic semiconductor and provided in said active layer;
• a fourth semiconductor layer comprising a p-type semiconductor and provided on said third semiconductor layer, said fourth semiconductor layer forming a distributed Bragg reflector;
• a base electrode contacting said third semiconductor layer;
• an emitter electrode electrically connected to said fourth semiconductor layer;
• and a collector electrode contacting said substrate, said method comprising the steps of:
• applying a forward bias electric filed between said emitter electrode and said base electrode so as to supply carriers to said active layer, thereby causing said active layer to generate light;
• reflecting the light generated in said active layer by the Bragg reflector so as to cause resonance;
• allowing a part of the resonating light to be emitted from said light emitting device;
• and
• applying a reverse bias electric field between said collector electrode and said base electrode so as to control the light emitted from said light emitting device.