US 5,288,656 A · Method of manufacturing a CCD solid state image sensing device

Abstract

In a CCD solid state image sensing device in which a photo-sensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.

Claims2

Dependent claims

A method of manufacturing a CCD solid state image sensing device comprising the steps of:

(a) forming a first insulating layer made of SiO.sub.2 on a P-type layer;
(b) forming a second insulating layer made of Si.sub.3 N.sub.4 on said first insulating layer;
(c) forming a third insulating layer made of SiO.sub.2 on said second insulating layer;
(d) removing said second and third insulating layers formed on a photo-sensitive section;
(e) forming a transfer electrode on said third insulating layer;
(f) implanting arsenic into said P-type layer to form a photo-sensitive region using said transfer electrode as a mask;
and
(g) carrying out a heat treatment in a nitrogen atmosphere to form said N-type impurity diffusion region.

5 more elements

Dependencies are inferred from the claim text.

Method of manufacturing a CCD solid state image sensing device

Life of this patent

Method of manufacturing a CCD solid state image sensing device

Life of this patent

Abstract

Claims2