Stencil mask and charged particle beam exposure method and apparatus using the stencil mask
AssigneeFujitsu Limited
InventorsKiichi Sakamoto, Yasushi Takahashi, Yoshihisa Oae, Hiroshi Yasuda
Life of this patent
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Abstract
A stencil mask is used for exposing a pattern on a wafer using a charged particle beam which is transmitted through the stencil mask. The stencil mask is made up of a plate, and at least a block pattern region formed on the plate. The block pattern region includes apertures of arbitrary shapes for transmitting the charged particle beam which irradiates the apertures within the block pattern region in one shot of the charged particle beam. The block pattern region forms a block mask in which a pair of confronting blanking electrodes is provided with respect to at least predetermined ones of the apertures.
Claims22
A stencil mask for use in exposing a pattern on a wafer using a charged particle beam which is transmitted through the stencil mask, said stencil mask comprising:
- a plate;
- at least a first block pattern region formed on said plate, said first block pattern region including apertures of arbitrary shapes for transmitting therethrough the charged particle beam which irradiates the apertures in one shot of the charged particle beam said first block pattern region forming a block mask;
- and
- a corresponding pair of confronting blanking electrodes disposed in each of selected ones of the apertures.
A stencil mask for use in exposing a pattern on a wafer using a charged particle beam which is transmitted through the stencil mask, said stencil mask comprising:
- a plate;
- at least a first block pattern region formed on said plate, said first block pattern region including corresponding apertures of arbitrary shapes for transmitting therethrough the charged particle beam which irradiates the apertures in one shot of the charged particle beam, said first block pattern region forming a block mask;
- and
- a corresponding pair of confronting blanking electrodes disposed in each of the apertures,
- said corresponding apertures within each block pattern region being arranged with a predetermined pitch so that patterns of two adjacent apertures of a corresponding block pattern region are isolated on the wafer.
A charged particle beam exposure method in which a charged particle beam is irradiated on an exposure region of a wafer via a stencil mask, said stencil mask including a plate and at least a first block pattern region formed on the plate, said first block pattern region including apertures of arbitrary shapes for transmitting therethrough the charged particle beam which irradiates the apertures in one shot of the charged particle beam, said first block pattern region forming a block mask and further comprising a corresponding pair of confronting blanking electrodes disposed in each of at least predetermined ones of the apertures, said charged particle beam exposure method comprising the steps of:
- (a) selectively irradiating the charged particle beam within one block pattern region of the stencil mask;
- and
- (b) applying a voltage across the respectively corresponding pairs of blanking electrodes of selected ones of the predetermined apertures within the first block pattern region depending on a desired pattern which is to be exposed on the wafer when said step (a) selectively irradiates the charged particle beam within the first block pattern region, so that the charged particle beam transmitted through each of the selected ones of the apertures is deflected outside the exposure region of the wafer.
Dependencies are inferred from the claim text.