Silicon nitride thin films with improved properties
AssigneeSaint-Gobain Vitrage International c/o Saint-Gobain Recherche
InventorsDidier Jousse, Pablo Vilato, Jean-Claude Bruyere, Brigette Reynes
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Abstract
A method for preparing silicon nitride films with improved properties and characterized by a limited concentration of hydrogen atoms, a high index of refraction, resistance to attack by a hydrofluoric solution, prevention of diffusion of alkalines and oxygen, and good dielectric properties such as optical gap. The process of preparation uses plasma CVD with ammonia. The invention can be applicable to flat screens, TFT transistors and functional glazings.
Claims8
A process for the production of a silicon nitride film by a chemical vapor deposition, comprising the steps of:
- generating a plasma from a gas mixture of SiH.sub.4 and N.sub.2 in helium in the presence of an alternating field having a frequency less than 1 MHz;
- and
- introducing NH.sub.3 into the plasma, so that a ratio R is greater than 0.95 and less than 1.00, where R is defined as, ##EQU2## wherein the plasma yields on a substrate the silicon nitride film.
Dependencies are inferred from the claim text.