Method for growing multiple single crystals and apparatus for use therein
AssigneeMEMC Electronic Materials, Inc.
InventorJohn D. Holder
Life of this patent
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Abstract
A method for growing multiple high-purity single crystals from a replenished melt by maintaining the purity of molten source material in the melt held in a crucible in a furnace of the type used for growing high-purity single crystals. The method includes the steps of growing at least one crystal from the source material in the crucible, extracting a portion of a volume of the melt remaining in the crucible, adding high-purity source material to the melt, and growing at least one more single crystal. Extractor apparatus used in the method includes an insulated receptacle having an inlet tube for conducting molten source material into the receptacle. A vacuum attached to the receptacle is used to draw the source material into the receptacle.
Claims8
A method for growing multiple high-purity single crystals from a replenished melt by maintaining the purity of molten source material in the melt held in a crucible in a furnace of the type used for growing high-purity single crystals, the method comprising the steps of:
- growing at least one crystal from the source material in the crucible;
- extracting a substantial liquid portion of the volume of the melt remaining in the crucible independently of growing another crystal from the melt whereby impurities in the melt tending to remain in liquid during said step of growing at least one crystal are removed with the extracted liquid portion;
- replenishing the melt with high-purity source material;
- and
- growing at least one more single crystal.
Dependencies are inferred from the claim text.