Solar cell and method of producing the solar cell

A method for producing a solar cell, comprising:

• forming a silicon oxide film on a first surface of a first conductivity type crystalline silicon substrate to a thickness not exceeding 2 nanometers by immersing the substrate in heated nitric acid;
• depositing a second conductivity type layer of microcrystalline or amorphous silicon on the silicon oxide film in a plasma, the silicon oxide film being consumed during deposition of the second conductivity type layer;
• and
• forming respective first and second electrodes on a second surface of the substrate opposite the first surface and on the second conductivity type layer.

A tandem solar cell comprising:

• a first conductivity type crystalline silicon substrate having opposed first and second surfaces;
• a second conductivity type layer of microcrystalline or amorphous silicon deposited on the first surface of the substrate in a plasma process and consuming an oxide film no more than 2 nanometers thick formed on the first surface of the substrate before depositing the second conductivity type layer;
• a first conductivity type microcrystalline silicon layer disposed on the second conductivity type layer;
• an intrinsic amorphous silicon layer disposed on the first conductivity type microcrystalline silicon layer;
• a second second conductivity type microcrystalline silicon layer disposed on the intrinsic amorphous silicon layer;
• a transparent electrode disposed on the second microcrystalline silicon layer;
• a grid electrode disposed on the transparent electrode;
• and
• a rear surface electrode disposed on the second surface of the substrate.

A method of producing a tandem solar cell, comprising:

• forming a silicon oxide film on a first surface of a crystalline silicon substrate to a thickness not exceeding 2 nanometers by immersing the substrate in heated nitric acid;
• depositing a second conductivity type layer of microcrystalline or amorphous silicon on the silicon oxide film in a plasma, the silicon oxide film being consumed during deposition of the second conductivity type layer;
• successively depositing on the second conductivity type layer a first conductivity type microcrystalline silicon layer, an intrinsic amorphous silicon layer, and a second second conductivity type microcrystalline silicon layer;
• and
• forming respective electrodes on a second surface of the substrate opposite the first surface and on the second second conductivity type layer.