Apparatus for continuous growth of SiC single crystal from SiC synthesized in a vapor phase without using graphite crucible

An apparatus for producing a SiC single crystal comprising:

• a chamber divided into a reaction zone and a sublimation-crystal growth zone,
• conduit means for supplying gaseous reactants into said reaction zone, whereby providing a gaseous mixture in said reaction zone in which solid-phase SiC is synthesized from the gaseous mixture,
• means for delivering solid SiC from said reaction zone into a sublimation portion of said sublimation -crystal growth zone,
• means for subliming said solid SiC in said sublimization portion, a
• mount base means for mounting a seed crystal thereon disposed below said sublimation portion, in a crystal growth portion of said sublimation-crystal growth,
• a rotatable shaft in supporting relation to said mount base, and
• heater means for maintaining the interior of said sublimation-crystal growth zone with a predetermined gradient of temperature which decreases from said sublimation portion toward said seed crystal;
• wherein said solid-phase SiC is synthesized from said gaseous reactants, is transferred into the sublimation portion and evaporated therein, and is condensed as a single crystal on the seed crystal in said crystal growth portion.