Structure and method of making Alpha-Ta in thin films
AssigneeInternational Business Machines Corporation
InventorsEvan G. Colgan, Peter M. Fryer
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Abstract
The present invention relates generally to a structure and a method of making Alpha-Ta films, and more particularly, to a structure and a method of making Alpha-Ta in thin films. A seed layer of Ta reactively sputtered in a nitrogen containing environment is grown on the substrate, and using this seed layer of Ta(N) layers of Alpha-Ta are then formed.
Claims26
A product made by forming an alpha-Ta layer that does not contain any detectable amount of nitrogen on a substrate comprising the steps of:
- (a) forming a seed layer of tantalum doped with nitrogen (Ta(N)), reactively sputtered in a nitrogen containing ambient, on said substrate, wherein said seed layer has a thickness of at least 20 angstroms, and
- (b) depositing a layer of alpha-Ta on said Ta(N) seed layer in a nitrogen free ambient, wherein said layer or alpha-Ta does not contain any detectable amount of nitrogen and has a resistivity of less than 50 micro-ohm-cm.
An article of manufacture made by forming an alpha-Ta layer that does not contain any detectable amount of nitrogen on a substrate comprising the steps of:
- (a) forming a seed layer of tantalum doped with nitrogen (Ta(N)), reactively sputtered in a nitrogen containing ambient, on said substrate, wherein said seed layer has a thickness of at least 20 angstroms, and
- (b) depositing a layer of alpha-Ta on said (Ta(N) seed layer in a nitrogen free ambient, wherein said layer of alpha-Ta does not contain any detectable amount of nitrogen and has a resistivity of less than 50 micro-ohm-cm.
A structure comprising a seed layer of tantalum doped with nitrogen (Ta(N)) on a substrate, wherein said seed layer has a thickness of at least 20 angstroms, and having a layer of alpha-Ta on said Ta(N) seed layer, wherein said layer of alpha-Ta does not contain any detectable amount of nitrogen and has a resistivity of less than 50 micro-ohm-cm.
A structure comprising a seed layer of tantalum doped with nitrogen (Ta(N)) on a substrate, and having a layer of alpha-Ta on said Ta(N) seed layer, wherein said seed layer of Ta(N) is at least 20 angstroms thick, and wherein said layer of alpha-Ta has a resistivity of less than 50 micro-ohm-cm.
Dependencies are inferred from the claim text.