Method of manufacturing gallium nitride semiconductor light-emitting device

Abstract

A gallium nitride semiconductor light-emitting device comprising: a substrate of semiconductor or insulator; an N layer of n-type gallium nitride semiconductor (Al.times.Ga.sub.1-x N:0.ltoreq..times..ltoreq.1); an I layer of semiinsulating gallium nitride semiconductor (Al.sub.x Ga.sub.1-x N:0.ltoreq..times..ltoreq.1); a first electrode formed on the I layer; a low-resistance region extending from the first electrode through the I layer at least to the N layer and formed by diffusion of the material of the first electrode; and a second electrode formed on the I layer isolatedly from the first electrode. This device is manufactured by: forming, on a substrate of semiconductor or insulator, at least an N layer of n-type gallium nitride semiconductor and an I layer of semiinsulating gallium nitride semiconductor one after another; forming a first electrode on the I layer; forming directly under the first electrode a low-resistance region, which leads to at least the N layer through the I layer, by heating; and forming, on the I layer, a second electrode isolatedly from the first electrode.

Dependencies are inferred from the claim text.