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AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsRonald J. Tonucci, Brian L. Justus
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The present invention provides a method of forming a semiconductor device mprising the steps of: forming a glass block of an acid inert glass having acid etchable glass rods extending therethrough, the acid etchable glass rods having an average diameter of less than 1 micron; partially etching one end of the acid etchable rods surface of the glass block to form cavities in the glass block on one surface thereof having an average diameter of less than 1 micron; depositing material(s) in the cavities to form a semiconductor device. The present invention also provides a method for forming a semiconductor device in which the acid etchable glass rods are completely etched and the deposition material(s) is deposited to fill the nanochannels formed by the etching. The present invention also provides semiconductor devices made by these methods.
A mesoscopic structure made by a method comprising the steps of:
A mesoscopic structure made by a method comprising the steps of:
A mesoscopic structure comprising a nanochannel glass matrix including an array of channels therethrough having an average diameter of less than 1 micron and a semiconductor material which is quantum confined by said glass channels.
A mesoscopic structure comprising a nanochannel glass matrix including an array of channels therethrough having a average diameter of less than 1 micron and a semiconductor material which is quantum confined in said glass channels and which becomes charged when said semiconductor material absorbs light of a given wavelength.
A mesoscopic structure comprising:
Dependencies are inferred from the claim text.