# US 5,262,652 A · Ion implantation apparatus having increased source lifetime > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,262,652 A - Document ID: US5262652A - Status: Granted - Kind: A - Application number: 07/898,854 - Filed: 1992-06-15 - Granted: 1993-11-16 - Earliest claimed: 1991-05-14 - Assignees: Applied Materials, Inc. - Inventors: Nicholas Bright; Paul A. Burfield; John Pontefract; Bernard F. Harrison; Peter Meares; David R. Burgin; Andrew S. Devaney; Peter T. Kindersley - Web page: https://patentgrep.com/patent/US5262652A ## CPC - H01J 27/18: with an applied axial magnetic field - H01J 27/022: {Details} - H01J 27/08: using arc discharge - H01J 2237/31701: Ion implantation - H01J 2237/31705: Impurity or contaminant control - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract Ion implantation equipment is modified so as to provide filament reflectors to a filament inside of an arc chamber, and to remove the electrical insulators for the filament outside of the arc chamber and providing a means of shielding, thereby reducing the formation of a conductive layer on said insulators and greatly extending the lifetime and reducing downtime of the equipment. The efficiency of the equipment is further enhanced by means of an interchangeable liner for the arc chamber that increases the wall temperature of the arc chamber and thus the electron temperature. The use of tungsten parts inside the arc chamber, obtained either by making the arc chamber itself or portions thereof of tungsten, particularly the front plate having the exit aperture for the ion beam, or by inserting a removable tungsten liner therein, decreases contamination of the ion beam. Serviceability of the arc chamber is improved by means of a unitary clamp that separately grips both the filament and filament reflectors. This clamp can also advantageously be made of tungsten. ## Claims ### Claim 1 In an ion implantation apparatus comprising an arc chamber in which a plasma is generated, including a source of gas, a filament connected to a source of current, electrical insulators for said filament and an exit aperture, and means of resolving the ion beam to allow preselected chemical species of ions to pass through the aperture for implanting a target, the improvement which comprises means for mounting the filament and a reflector therefore so as to maintain an insulating gap between the reflector and the arc chamber, and means for mounting electrically insulating means for the filament outside of the arc chamber on the source body. ### Claim 2 (depends on 1) Apparatus according to claim 1 wherein said insulators are of a ceramic insulator material. ### Claim 3 (depends on 1) Apparatus according to claim 1 wherein said insulators are of boron nitride or aluminum oxide. ### Claim 4 (depends on 1) Apparatus according to claim 1 wherein said electrically insulating means has shield means surrounding the insulating means. ### Claim 5 (depends on 4) Apparatus according to claim 4 wherein said shield is in the form of a labyrinth. ### Claim 6 (depends on 4) Apparatus according to claim 4 wherein said electrically insulating means has an inert gas cloud surrounding the insulating means. ### Claim 7 (depends on 1) Apparatus according to claim 1 wherein said electrically insulating means has an inert gas cloud surrounding the insulating means. ### Claim 8 (depends on 1) Apparatus according to claim 1 wherein said reflector is made of tungsten. ### Claim 9 (depends on 1) Apparatus according to claim 1 wherein said arc chamber is made of tungsten. ### Claim 10 (depends on 9) Apparatus according to claim 9 wherein the front plate of the exit aperture for the ion beam therein is made of tungsten. ### Claim 11 (depends on 1) Apparatus according to claim 1 wherein the arc chamber has a replaceable liner therein. ### Claim 12 (depends on 11) Apparatus according to claim 11 wherein said liner is made of a refractory material selected from the group consisting of molybdenum, tungsten, glassy carbon, carbon and silicon carbide. ### Claim 13 (depends on 12) Apparatus according to claim 12 wherein said liner is made of tungsten. ### Claim 14 (depends on 1) Apparatus according to claim 1 wherein said filament is a tungsten rod extending into said arc chamber. ### Claim 15 (depends on 1) Apparatus according to claim 1 wherein said filament is a tungsten loop at one end of said arc chamber. ### Claim 16 (depends on 1) Apparatus according to claim 1 wherein said filament and reflector are attached to separate jaws of a unitary clamp. ### Claim 17 (depends on 16) Apparatus according to claim 16 wherein said clamp has two pairs of jaws, one set of the jaws attached to said filament and another set of the jaws attached to said reflector in which the jaws attached to said filament being opened independently. ### Claim 18 (depends on 17) Apparatus according to claim 17 wherein said one pair of jaws also provides shielding for the insulating means. ### Claim 19 (depends on 17) Apparatus according to claim 17 wherein said clamp is made of a material selected from the group consisting of molybdenum or tungsten. ### Claim 20 (depends on 19) Apparatus according to claim 19 wherein said clamp is made of tungsten. ### Claim 21 In an ion implantation system comprising an ion source including an arc chamber for producing an ion beam of a preselected chemical species at a predetermined beam current level, beam analyzing means for receiving said beam and selectively separating various ion species on the basis of mass to produce an analyzed beam, and beam resolving means for permitting said separated species to pass to a target to be implanted, the improvement which comprises using tungsten as the material of a portion of the arc chamber wherein the front plate of the arc chamber having an exit aperture for said ion beam is made of tungsten. ### Claim 22 (depends on 21) An ion implantation system according to claim 21 wherein one or more walls of said arc chamber is made of tungsten. ### Claim 23 (depends on 22) An ion implantation system according to claim 22 wherein said arc chamber has a removable tungsten liner. ### Claim 24 (depends on 21) An ion implantation system according to claim 21 wherein said arc chamber has a removable tungsten liner. ### Claim 25 (depends on 21) An ion implantation system according to claim 21 wherein said arc chamber has a filament therein and a reflector therefor, wherein said reflector is made of tungsten. ### Claim 26 A method of improving the ionization efficiency of an ion source having an arc chamber including a filament therein in an ion implantation apparatus which comprises lining the walls of the arc chamber with a removable refractory material so that heat generated in the arc chamber when power is fed to the filament and the arc chamber plasma, is transferred by a liner to the walls of the arc chamber by radiation, thereby increasing the electron temperature of the arc chamber. ### Claim 27 (depends on 26) A method according to claim 26 wherein said refractory material is selected from the group consisting of carbon, glassy carbon, silicon carbide, molybdenum and tungsten. ### Claim 28 (depends on 27) A method according to claim 27 wherein said refractory material is tungsten.