US 5,262,352 AGranted

Method for forming an interconnection structure for conductive layers

AssigneeMotorola, Inc.

InventorsMichael P. Woo, James D. Hayden, Richard D. Sivan, Howard C. Kirsch, Bich-Yen Nguyen

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Abstract

An interconnect structure is formed having a substrate (10). A conductive layer (14) is formed overlying the substrate (10). A conductive layer (18) is formed overlying the conductive layer (14). An opening (19) is etched through the conductive layer (18), exposing a top portion of conductive layer (14), and forming a sidewall of the conductive layer (18). An selective isotropic etch procedure is used to laterally recess the sidewall of the conductive layer (18). A sidewall spacer (22) is formed adjacent the sidewall of the conductive layer (18). A conductive layer (24) is formed within opening (19) and adjacent the spacer (22) to form an interconnection between conductive layers (24 and 14). The interconnection is self-aligned, and conductive layer (18) is reliably isolated from the interconnect due to the lateral recessed sidewall of the conductive layer (18).

Claims20

Dependent claims

A method for forming an interconnection structure overlying a substrate having a surface, the method comprising the steps of:

forming a first conductive layer overlying the surface of the substrate;
forming a first dielectric layer overlying the first conductive layer;
forming a second conductive layer overlying the first dielectric layer;
forming a second dielectric layer overlying the second conductive layer;
forming an opening through the second dielectric layer and the second conductive layer, the opening having a center and forming a sidewall of the second conductive layer;
laterally recessing the sidewall of the second conductive layer laterally outward from the center of the opening in a direction parallel to the surface of the substrate to form a recessed sidewall of the second conductive layer;
extending said opening through the first dielectric layer, the opening exposing a portion of the first conductive layer;
forming a sidewall dielectric adjacent the recessed sidewall of the second conductive layer;
and
forming a third conductive layer within the opening and overlying the second dielectric layer, the third conductive layer making electrical contact to the first conductive layer wherein the sidewall dielectric isolates the second conductive layer from the third conductive layer.

7 more elements

A method for forming an interconnection structure comprising the steps of:

providing a substrate having a surface;
forming a plurality of conductive layers overlying the substrate;
forming dielectric regions to electrically isolate portions of each of the conductive layers within the plurality of conductive layers;
forming an opening through at least one of the conductive layers within the plurality of conductive layers to form a sidewall of the at least one of the conductive layers within the plurality of conductive layers, the opening having a center and exposing a portion of each of at least two of the conductive layers within the plurality of conductive layers;
laterally recessing at least one of the conductive layers within the plurality of conductive layers laterally outward from the center of the opening to form a laterally recessed sidewall;
forming a dielectric sidewall layer laterally adjacent the laterally recessed sidewall;
and
forming a connecting conductive layer within the opening, the connecting conductive layer being selectively electrically coupled to at least one of the conductive layers within the plurality of conductive layers to form said interconnection structure, the connecting conductive layer being electrically isolated from the laterally recessed sidewall by the dielectric sidewall layer.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 07/937,025Filed 31 Aug 1992
Granted: 16 Nov 1993
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10W 20/076
Of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers: in via holes or…
H10W 20/069
Of conductive parts of the interconnections: by forming self-aligned vias or self-aligned contact plugs
H10W 20/0693
By forming self-aligned vias or self-aligned contact plugs: by forming self-aligned vias
H10W 20/077
Of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers: on sidewalls or on…