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US 5,259,883 AGranted
Method of thermally processing semiconductor wafers and an apparatus therefor
AssigneeKabushiki Kaisha Toshiba
InventorsKikuo Yamabe, Katsuya Okumura
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Abstract
An apparatus for thermally processing semiconductor wafers within a reaction tube in which the wafers are thermally processed in a higher temperature region within the reaction tube. The thermally processed semiconductor waters are moved into a lower temperature region within the reaction tube. The rate of heat radiated from the thermally processed semiconductor waters is reduced in the lower temperature region within the reaction tube.
Claims13
A semiconductor wafer thermal processing apparatus comprising:
- a reaction tube having an opening at one side of said reaction tube for inserting said semiconductor wafers;
- a heater provided only at a heating portion of said reaction tube, said heating portion of said reaction tube separated from said opening of said reaction tube;
- and
- means for reducing the rate of heat radiation out of a cooling portion of said reaction tube, said cooling portion of said reaction tube being near said opening of said reaction tube said reducing means including:
- a reflector provided at said cooling portion of said reaction tube for controlling said rate at which said semiconductor wafers are cooled and excluding a heater in said cooling portion of said reaction tube.
2 more elements
Dependencies are inferred from the claim text.