Visible light surface emitting semiconductor laser
AssigneeThe United States of America as represented by the Secretary of the United States Department of Energy
InventorsGregory R. Olbright, Jack L. Jewell
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AssigneeThe United States of America as represented by the Secretary of the United States Department of Energy
InventorsGregory R. Olbright, Jack L. Jewell
Estimating the term…
A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Specific embodiments of the invention for generating red, green, and blue radiation are described.
A vertical cavity, surface emitting laser that emits radiation having a wavelength in the range between 600 and 700 nanometers comprising:
Dependencies are inferred from the claim text.