Composite dielectric for a semiconductor device and method of fabrication
AssigneeIntel Corporation
InventorsJoseph Shappir, Ido Rahat
Life of this patent
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Abstract
A high-quality, highly reliable, composite dielectric layer for a semiconductor device. The composite dielectric layer is formed by nitriding a silicon surface, forming an oxide layer on the nitrided silicon surface, and then annealing the nitrided-silicon surface and the oxide in an oxygen ambient.
Claims14
A method of forming a composite dielectric layer for a semiconductor device comprising the steps of:
- nitriding a silicon surface;
- forming an oxide layer on said nitrided silicon surface;
- oxidizing said oxide layer and said nitrided silicon surface to from said composite dielectric layer;
- and
- forming said device on said composite dielectric layer.
A method of forming a composite dielectric layer for a semiconductor device on a silicon substrate comprising the steps of:
- forming a silicon nitride layer on said silicon substrate;
- forming an oxide layer on said silicon nitride layer;
- oxidizing said layers to form said composite dielectric layer;
- and
- forming said device on said composite dielectric layer.
A method of forming a high quality, highly reliable ULSI manufacturable composite dielectric layer for a semiconductor device formed on a silicon substrate comprising the steps of:
- thermally growing a silicon nitride layer on said silicon substrate by exposing said silicon substrate to pure ammonia at a reduced pressure;
- depositing a high temperature oxide layer on said silicon nitride layer by CVD;
- oxidizing said thermally grown silicon nitride layer and said deposited high temperature oxide layer in an ambient comprising O.sub.2 and TCA to form said composite dielectric layer;
- and
- forming said device on said composite dielectric layer.
Dependencies are inferred from the claim text.