Valance specific lanthanide doped optoelectronic metal fluoride semiconductor device
AssigneeForschungszentrum Julich GmbH
InventorsHans Luth, Harald D. Muller, Jurgen Schneider, Ralf Strumpler
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Abstract
An optoelectronic device, e.g. for integrated circuits, has an Si, II-VI or III/V semiconductor layer and an LaF.sub.3 or La.sub.1-x X.sub.x F.sub.3 insulating layer which is doped with Nd or Er to generate an optical signal whose wavelength is determined by the 4f ions used. The insulating layer can be grown epitaxially on the semiconductor layer and the lanthanide element ion substituting for a metal ion of the material forming the insulating layer has the same valence as the metal for which it is substituted.
Claims15
A lanthanide-doped optoelectronic device for generating optical signals of a wavelength determined by a 4f lanthanide element of the device, said device comprising a semiconductor layer composed of a semiconductor selected from the group which consists of Si, of III-V semiconductors and of II-VI semiconductors, and an insulator bonded to said semiconductor layer and selected from the group which consists of LaF.sub.3 and a lanthanum trifluoride containing an element X selected from the group which consists of Ce, Pr, Pm, Sm, Eu, Gd, Tb, Dy, Sc, Y, Ho, Tm, Yb and Lu, and wherein 1 to 10 atomic percent of the element selected from the group of La and X thereof is substituted by a doping element selected from the group which consists of Nd and Er.
Dependencies are inferred from the claim text.